Atomic layer deposition of Pt growth template for orienting PbZrxTi1−xO3 thin films

Abstract

Atomic layer deposition (ALD) offers a method for sidewall growth due to its ability to deposit isotropic thin films. As a first step to provide underlying growth templates on sidewalls, proof-of-principal depositions were made on flat wafer surfaces using ALD Pt thin films deposited on: ALD HfO2, ALD Al2O3, and oxidized sputtered-Ti films. X-ray diffraction rocking curve full-width half maxima for 25 nm Pt films obtained after a rapid thermal anneal at 700 °C were 2.06°, 5.45°, and 7.84° on the TiO2, Al2O3, and HfO2 coatings, respectively. Sheet resistance decreased with Pt thickness (deposited onto TiO2/SiO2/Si): from 5 Ω/□ at 25 nm to 0.63 Ω/□ at 100 nm. A 500 ± 25 nm PbZr0.52Ti0.48O3 film was deposited by a chemical solution deposition process onto 100 nm ALD Pt films deposited on the TiO2/SiO2/Si substrates. The 001 Lotgering factor derived from x-ray diffraction data was 0.56 for 001/100 oriented PbZr0.52Ti0.48O3.