Atomic Layer Deposition of Insulating AlF3/Polyimide Nanolaminate Films

Xinzhi Li,Marko Vehkamäki,Matti Putkonen,Mikko Ritala,Miika Mattinen,Mikko Heikkilä,Markku Leskelä

doi:10.3390/coatings11030355

Xinzhi Li, Marko Vehkamäki + Show 5 more

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https://doi.org/10.3390/coatings11030355

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Abstract

This article describes the deposition of AlF3/polyimide nanolaminate film by inorganic-organic atomic layer deposition (ALD) at 170 °C. AlCl3 and TiF4 were used as precursors for AlF3. Polyimide layers were deposited from PMDA (pyromellitic dianhydride, 1,2,3,5-benzenetetracarboxylic anhydride) and DAH (1,6-diaminohexane). With field-emission scanning electron microscopy (FESEM) and X-ray reflection (XRR) analysis, it was found that the topmost layer (nominally 10 nm in thickness) of the nanolaminate film (100 nm total thickness) changed when exposed to the atmosphere. After all, the effect on roughness was minimal. The length of a delay time between the AlF3 and polyimide depositions was found to affect the sharpness of the nanolaminate structure. Electrical properties of AlF3/polyimide nanolaminate films were measured, indicating an increase in dielectric constant compared to single AlF3 and a decrease in leakage current compared to polyimide films, respectively.

Highlights

Electrical properties of AlF3 /polyimide nanolaminate films were measured, indicating an increase in dielectric constant compared to single AlF3 and a decrease in leakage current compared to polyimide films, respectively
RC delay, power consumption, and crosstalk between wires can be achieved by reducing the dielectric constant (k) of the interlayer dielectric (ILD) [7]
With the same growth rates as they grow on Si substrates. On this basis it was calculated that 35 cycles of the AlF3 process and 20 cycles of the PI process would result in a nanolaminate where the individual layer thicknesses would be 10 nm

Summary

Introduction

Electrical properties of AlF3 /polyimide nanolaminate films were measured, indicating an increase in dielectric constant compared to single AlF3 and a decrease in leakage current compared to polyimide films, respectively. The challenge is the transmission of power and the distribution of clock signals to control time and synchronize operations. This challenge involves material properties, technology, and system architecture [5,6]. Compared with the Al/SiO2 technology, adoption of copper and low-k dielectrics have reduced the capacitance and the resistivity between wires [8]. There are two ways to reduce k: one is to reduce the number of dipoles in the material, the other is to reduce the polarizability of the material [9] This means that materials with less polarizable chemical bonds than Si-O or lower density can be considered as low-k substitutes for SiO2 [10,11]. Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations

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