Abstract
TiO 2 thin films doped or mixed with cobalt oxide were grown by atomic layer deposition using titanium tetramethoxide and cobalt(III)acetylacetonate as metal precursors. The films could be deposited using both O 3 and H 2O as oxygen precursors. The films grown using water exhibited considerably smoother surface than those grown with ozone. The TiO 2:Co films with Co/(Co + Ti) cation ratio ranging from 0.01 to 0.30 were crystallized by annealing at 650 °C, possessing mixed phase composition comprising rutile and anatase and, additionally, CoTiO 3 or CoTi 2O 5. The annealed films demonstrated magnetic response expressed by magnetization curves with certain hysteresis and coercive fields.
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