Abstract

Five-layer crystalline thin film structures were formed, consisting of ZrO2 and Co3O4 alternately grown on Si(100) substrates by atomic layer deposition at 300°C using ZrCl4 and Co(acac)3 as the metal precursors and ozone as the oxygen precursor. The performance of the laminate films was dependent on the relative content of constituent oxide layers. The magnetization in these films was nonlinear, saturative, and with very weak coercive fields. Electrical measurements revealed the formation of significant polarization versus external field loops and implied some tendency toward memristive behavior.

Highlights

  • Scanning electron microscope images demonstrated that the surfaces in the case of all four thin film structures (Fig. 2) were quite uniformly covered by grain-like features, which may be connected to crystallization, and indicate that the deposition temperature of 300◦C was high enough to cause crystallization in both Co3O4 and ZrO2 thin films

  • Comparison of Scanning transmission electron microscopy (STEM) images and Energy-dispersive X-ray spectroscopy (EDX) composition profiling made of both types of nanolaminates (Fig. 5) revealed that slight mixing of oxide layers at the interfaces between two oxides has occurred in both cases

  • ZrO2-Co3O4 nanolaminates were grown by atomic layer deposition

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Summary

Introduction

Using the suitable deposition parameters, ALD growth of ZrO2/Co3O4 double layers was demonstrated, together with their performance as dielectric and magnetic materials. The zE-mail: helina.seemen@ut.ee resistive switching and other electrical characteristics of ZrO2-Co3O4 nanolaminates were studied to evaluate whether such films can imply a tendency toward memristive behavior.

Results
Conclusion
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