Abstract
In this work processes of atomic layer deposition (ALD) of TiO2 and TiN using ALD method and impact of thickness and composition of grown film on stoichiometry and morphology of deposited layer are investigated. It is shown, that with increasing ALD cycles the deposition of a thin metal layer on the back inactive side of the silicon substrate is observed and the roughness on the active surface of deposited metal layer is decreased.
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