Abstract
We present an atomic layer deposition (ALD)-process scheme that allows us to deposit ternary oxides such as LaxAlyOz and LaxZryOz at low process temperatures of 250 {degree sign}C. We combine these oxides with ALD-grown Al2O3 to fabricate various high-k dielectric stacks. By means of metal gate / high-k oxide / semiconductor capacitors we evaluate these materials regarding their electrical properties and thermodynamic stability on silicon and germanium substrates. Concerning the silicon substrates, we observe that superior electrical characteristics are achieved if a thin layer of LaxZryOz is sandwiched between two about 1 nm thick Al2O3 layers. By this approach, hydroxylation of the La-containing oxides is suppressed, minimizing leakage currents as well as oxide- and interface charges.
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