Abstract
We present a study on the electrical characteristics of Al 2 O 3 and La x Al y O z High-k Dielectric stacks on p-type silicon-, and n-type germanium substrates. Atomic layer deposition is used to fabricate ultra-thin oxide layers and laminates in the few-nm range at process temperatures of 250 °C. By means of metal gate / high-k oxide / semiconductor capacitors we evaluate these material systems regarding their capacitance-voltage and current-voltage characteristics.
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