Abstract
Using scanning tunneling microscopy and low energy electron diffraction techniques, we have investigated the structural rearrangement of Si(100)4×3-In surface induced by room temperature interaction with atomic hydrogen. The disintegration of the 4×3-In layer into three-dimensional In islands is substantiated by direct evidence. It has been found that In-denuded regions exhibit the stripes of 4a (a=3.84 Å) periodicity, indicating that the Si substrate in the Si(100)4×3-In phase has a 4×1 reconstruction. The mode of atomic hydrogen interaction with Si(100)4×3-In surface phase has been determined. By comparing the present results with the known data of other submonolayer metal/silicon systems, the relationship between the adsorbate bonding and the mode of surface reaction with atomic hydrogen is established.
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