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Abstract
A complete determination of individual atomic coordinates for the Si(111) 7×7 surface has been carried out by dynamical low-energy electron diffraction. The dimer-adatom-stacking fault (DAS) model, after large vertical and lateral relaxations, was found to produce calculated spectra in remarkably good agreement with the data. Atoms in the faulted half of the unit cell are raised from those of the unfaulted half. Adatoms at corner sites are higher than those at center sites.
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