Abstract
A microscopic view of O2 adsorption on an epi Ge(001)-2 × 1 surface at room temperature, as studied by synchrotron radiation photoemission, is presented. One of the dissociated O atoms etches off the up-dimer atom to form the GeO species. The other dissociated O atom fills the vacancy and bonds with the underneath Ge atom in the subsurface layer. The down-dimer atom and its backbond with the subsurface atom remain inert to O2. The present investigation reports the notorious effect of O2 on the Ge surface, which should not be overlooked in Ge metal–oxide–semiconductor (MOS) device development.
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