Abstract
Indium-doped zinc oxide (ZnO:In) has been grown by spatial atomic layer deposition at atmospheric pressure (spatial-ALD). Trimethyl indium (TMIn), diethyl zinc (DEZ) and deionized water have been used as In, Zn and O precursor, respectively. The metal content of the films is controlled in the range from In/[In+Zn] = 0 to 23% by co-injecting the vaporized metal precursors (i.e. DEZ and TMIn) in the deposition region and varying their flows. A high doping efficiency (up to 95%) is achieved, resulting in films with very high carrier density (6·1020 cm−3), low resistivity (3 mΩ·cm) and high transparency in the visible range (> 85%). The morphology of the films changes from polycrystalline to amorphous with increasing indium content above 15%, while maintaining a low resistivity value (< 7 mΩ·cm). Spatial-ALD combines a fine tuning of the composition, morphology and electrical properties of ZnO:In films with high deposition rates (> 0.1 nm/s).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
