Abstract
We report on the growth of ZnSe 1−xTe x layers on (100) oriented GaAs substrates by atmospheric pressure metal-organic chemical vapour deposition (MOCVD) with a new zinc adduct dimethylzinc-triethylamine. Optical studies were confined to samples with a low tellurium (Te) concentration, x<0.02, in which luminescence is dominated by recombination of excitons bound to isoelectronic single Te ions (S1 band) and ion clusters (S2 band). The temperature dependence of these bands was investigated and accounted for in terms of a model with the isoelectronic centres described by short range spherical potentials at which hole capture occurs via low lying resonant energy states in the valence band.
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