Atmospheric Degradation and Performance Recovery of Two‐Dimensional MoS2 Field Effect Transistor†

Abstract

Comprehensive SummaryTwo‐dimensional (2D) transition metal dichalcogenides (TMDCs) showed great potentials in 2D nanoelectronic devices due to their abundant and unique properties. The performance stability of the 2D TMDCs devices turns into one of the keys for their practical applications but has been rarely explored. Here, we investigated stability of MoS2 devices in ambient condition and contributed the device performance degradation to the surface oxidation of the contact metals with low work function, which increased the contact barrier and hindered the electron injection. We developed a new approach to recover the performance of the aged devices through the selective doping of contacts with organolithium, which prolonged the lifetime of MoS2 devices. Our work not only provides important insights into the stability of 2D TMDCs devices, but also opens up a new avenue for optimizing the performance of 2D MoS2 devices.