Abstract
For 〈110〉 channeling, the yield of helium backscattering from gallium and from phosphorus atoms near the surface of a GaP crystal has been studied. For symmetric tilts in the {110} plane, the yield exhibits strong asymmetry, with opposite direction of the asymmetry for the two sublattices. Based on computer simulation of particle trajectories, the asymmetry is explained as a consequence of the asymmetric arrangement of 〈110〉 rows of gallium and phosphorous atoms, respectively. The effect has previously been shown to be very useful for distinguishing between impurity substitutions of the two types of atoms in a compound with ZnS-type structure.
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