Abstract
In recent years, ion-gating devices have been used in artificial neuromorphic computing and achieved high performance for time-series data processing. However, the origin of this performance still needs to be clarified. In this study, we fabricated an all-solid-state redox device with functional material Fe3O4 and Li-ion conducting solid electrolytes, and the transient response of the electrical resistance of the Fe3O4 thin film to time-series data input was investigated. The transition between high and low electrical resistance states was asymmetric, and residual Li-ion in the thin film led to a hysteresis effect. These unique features, which are induced by ion-electron dynamics coupling, contributes to the high performance of physical reservoir computing utilizing an ion-gating device.
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