Abstract
Asymmetric electrode (Ag and indium tin oxide (ITO)) influence upon ferroelectric switching dynamics in polyvinylidene fluoride-hexafluoropropylene (PVDF-HFP) thin films across Ag/PVDF-HFP/ITO capacitor structures is systematically investigated. Grazing incidence X-Ray diffraction (GI–XRD), atomic force microscopy (AFM), and UV–visible spectroscopy are utilized to comprehend the structural and microstructural characteristics of PVDF–HFP thin films upon ITO interface. Low voltage rectified and asymmetric current–voltage (I–V) curves reveal the varied barrier potential due to the asymmetric electrodes. Typical squared hysteresis loops along with uniform domain growth model are verified from quasi-static and dynamic ferroelectric loop measurements. Further, from low-frequency (10 and 15 mHz) quasi-static and dynamic (100–1000 Hz) triangular pulses, the switching time, domain dimension with respect to frequency, and amplitude of the electric field are separately evaluated and noted that smaller switching times when electron traverses from Ag to ITO electrode.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
