Abstract
The effects of doping electrons and holes into the two-dimensional CuO 2 square lattice are studied in the three-band extended Hubbard model by means of the mean-field auxiliary-boson approach. The metal-insulator transition in the electron-doping side is shown to be different from that in the hole-doping side. Doping effects in the two sides are remarkably asymmetric being in agreement with the photoemission and absorption measurements; doping holes predominantly creates oxygen holes with very little Cu 3+ ions, whereas doped electrons exclusively occupy the Cu sites yielding monovalent Cu 1+ ions with some induced oxygen holes. The effective-mass ratio of the hole-doped to the electron-doped quasiparticles very close to the undoped limit is found to be m ∗ hole/ m ∗ el ∼ 7.7, in qualitative agreement with the value ∼4.3 obtained by Sá de Melo and Doniach.
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