Abstract
In this paper, the design and implementation of a Doherty power amplifier (DPA) are proposed using gallium nitride high electron mobility transistors (GaN HEMTs). Class-F and Class-C modes are combined to obtain an asymmetric DPA. The precise active load-pull controlling of fundamental and harmonic terminations of the DPA is simulated and analyzed, including the parasitics of the transistors. The measurements of the DPA with the phase difference, input power ratio adjustment, and envelope tracking of the auxiliary PA are discussed in detail in order to achieve a competitive performance. A greater than 63% drain efficiency is obtained within the 10-dB input power dynamic range at 2.1 GHz. The peak of the drain efficiency reaches 73%, with a corresponding output power of 46 dBm.
Highlights
The high order modulations and the multi-carrier schemes, which are widely adopted to improve data rates and spectral efficiency in modern communication standards, have resulted in signal characteristics with large peak to average power ratios (PAPR)
In order to meet the demand for minimized transmitter energy consumption, power control has become a key requirement in modern microwave frequency communication stations, and, the power amplifier (PA) must provide a high efficiency when in the output power back-off (OPBO) condition [1]
GaAs, GaN, and processing are proposed in the namic range, we experimentally demonstrate an asymmetrical Doherty PA (DPA) with ETrecent of the auxilliteratures [27,28,29,30,31], which show good performances by using some compact matching iary amplifier in this paper, in order to keep a high efficiency over a wider range of output techniques
Summary
The high order modulations and the multi-carrier schemes, which are widely adopted to improve data rates and spectral efficiency in modern communication standards, have resulted in signal characteristics with large peak to average power ratios (PAPR). Multi-band DPAs allow the DPAs to optimize the performance in each carrier frequency, as demonstrated by both dualand tri-band, which mainly focus on the optimization of the output combiners and the PAs [23,24,25,26] GaAs, GaN, and CMOS processing are proposed in the namic range, we experimentally demonstrate an asymmetrical DPA with ETrecent of the auxilliteratures [27,28,29,30,31], which show good performances by using some compact matching iary amplifier in this paper, in order to keep a high efficiency over a wider range of output techniques.
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