Abstract
We have studied the mechanisms of current transfer and the capacitance-voltage characteristics of a radiation-resistant isotype n-In2Se3/n-InSe heterocontact in which the region depleted of major charge carriers is localized predominantly in a relatively low-ohmic semiconductor—the α-type In2Se3 with a large density of defects. The spectrum of the relative quantum efficiency of photoconversion in this structure depends on the thickness of the In2Se3 layer and on the geometry of illumination of the heterocontact.
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