Asymmetric conductance peaks observed in silicon metal-oxide-semiconductor capacitors

Abstract

We report the observation of highly asymmetric peaks in conductance data from silicon metal-oxide-semiconductor capacitors. By extending the standard surface-potential fluctuation model to incorporate a range of capture cross sections at a given surface potential, we obtain excellent fits to the experimental data. Our results are consistent with capture into the ‘‘fast’’ Si:SiO2 interface states taking place either by direct tunneling or via an activated capture process.