Abstract
In this work, we carried out simulations to demonstrate the effects of using asymmetric channel thickness in conventional double gate junctionless field- effect transistors (DG JLFETs) by incorporating wide- source narrow-drain (WSND) and narrow-source wide-drain (NSWD) structures. By altering narrow or wide side channel thicknesses, the proposed structures offer flexibility of performance optimization e.g. better ION /IOFF ratio and subthreshold swing (SS) characteristics compared to the conventional junctionless FETs. The study of the electrical characteristics with different structural dimensions, doping concentrations and gate oxides suggest that the proposed structures can be feasible for the next generation high speed and low power applications. Moreover, the study has been extended to explore the applicability and the operation of the proposed structures as a biosensor for the detection of biomolecules in a dry environment.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
