Abstract
Asymmetric (6.7–300)-nm-thick InAs quantum wells (QWs) confined between AlAsSb and CdMgSe barriers have been fabricated by molecular-beam epitaxy. A special procedure of the CdMgSe-on-InAs growth initiation, exploiting an ex situ S passivation of InAs and in situ deposition of an ultrathin ZnTe buffer layer, results in the fabrication of high quality structures with a density of extended defects below 106 cm2. QW photoluminescence studies demonstrate a confinement effect and confirm the type I band alignment at the heterovalent InAs/CdMgSe interface mediated by the ZnTe interlayer. Observation of Shubnikov de Haas oscillations of magnetoresistance for an asymmetric 19-nm-thick InAs QW indicates an existence of the two-dimensional electron gas with the low-temperature sheet electron density of 1.3×1012 cm−2 and the mobility as high as ∼10 000 cm2/V s.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
