Abstract
We comprehensively investigate defects in 3-D SONOS devices (macaroni vs. full channel) in fresh state and after program/erase cycling endurance stress with three trap characterization techniques: charge pumping for SiO2/poly-Si interface traps assessment, fast random telegraph noise measurement for traps in the poly-Si channel, and trap spectroscopy by charge injection and sensing for assessment of traps in the tunnel oxide. The number of interface traps after endurance stress increases in the same way for both full and macaroni channels. For all devices and channel processes, RTN is dominated by traps near the Fermi level. A small improvement of near-interface poly-Si traps is detected for macaroni. No change in RTN trap properties is observed after endurance stress. Trap generation in the tunnel oxide after endurance stress follows similar trend in both channel type.
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