Assessment of the possibility of determination of the electrophysical characteristics of Cd x Hg1–x Te p +–n-structures using differential hall measurements

Abstract

The process of reconstuction of the distribution profile of hole concentration in the p +–n structure by the method of differential Hall measurements upon implantation of ions As+ (Е = 190 keV, D = 3.1014 cm-2, j = 0.025 μA/cm2) into epitaxial films Cd x Hg1–x Te for x ~ 0.2, with the initial electron concentration and mobility n = 1014 cm-3 and μ = 2∙105 cm2∙V–1∙s–1 is numerically simulated. The dependences of degree of reconstruction of the hole-concentration distribution profile on the depth of a shunting n-layer and magnitude of the magnetic field, at which the electrophysical parameters of the p +–n structure are measured, are calculated. The dependence of the limiting magnetic field determining the magnetic-field range for measurements on the n-layer depth is found. It is shown that in calculations one should use the conduction values measured at the same magnetic fields as the Hall coefficients for determination of the holeconcentration distribution profile using the Petritz model.