Abstract
A silicone encapsulant has been investigated as to its effectiveness in preventing migrated gold resistive shorts (MGRS). Using a temperature cycle of -10°C to +100°C, MGRS formation was observed at moisture levels of 0.9 to 1.2 percent V/V for Cl <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> , 1 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> , K <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> , and Na <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ion contaminated environments. The results indicate that water molecules and halogen, Na <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> and K <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ions will be readily transmitted through the silicone material. Dendritic growth has been found to occur when threshold water and ion levels were exceeded. A technique for measuring the kinetics Of moisture penetration through encapsulants is described. The method consists of utilizing moisture mi-. crosensors bonded within the candidate hybrid package; followed by microspot AES, EDXA analysis of ionic contamination. The test results from the hybrid moisture microsensors are compared with kinetics data' obtained by measuring surface currents on .thermal SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> . Measured moisture and ionic contamination levels and the formation of MGRS in the presence of Na, I, K, Cl, S ions are summarized.
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