Assessment of sense measurement duration on BTI degradation in MG/HK CMOS technologies using a novel stacked transistor test structure

Abstract

The impact of sense measurement duration on BTI degradation in MG/HK devices is assessed by adapting a novel stacked transistor test structure in combination with a multiple drain current sensing scheme in the μs and ms time range. For NBTI, a fast de-trapping component causes dispersion in the DC time evolution for the different sense measurement duration but only at short stress times. However, at long stress times, relevant for lifetime projections, the impact diminishes. For PBTI and AC stress, the sense measurement duration is not a contributing factor. For technology qualifications where prolonged stresses are exercised, sense duration in the μs and ms time range yield equivalent model parameters.