Abstract
A new methodology utilizing time resolved stress-and-diagnostic-sense characterization is introduced to assess the impact of RTN on stochastic BTI in scaled CMOS devices. The observed RTN can be modeled using normal distributions and it is found that BTI stress does not result in an increase of RTN. Furthermore, the impact of RTN on stochastic BTI modeling is studied by MC simulations and it is shown that for small BTI degradation RTN leads to a significant skew of the ΔV T distributions at high percentile while for larger BTI degradation RTN becomes a negligible factor.
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