Abstract
Under post ion-implantation annealing treatments, semi-insulating GaAs wafers may convert to n-type or p-type. A review of the effects responsible for that conversion, and, more generally, for the influence of substrates on the properties of implanted layers is presented. These effects are related to the exodiffusion properties of shallow and deep impurities and point defects. The electrical properties of the most important of them are reminded, together with the physical phenomena which control their incorporation in Bridgman and LEC ingots. The spatial distribution of impurities and defects in these ingots is also discussed from the point of view of the quality requirements of semi-insulating wafers for the GaAs IC's technology.
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