Abstract
We report the fabrication and characteristics of large format (640 × 512) InP/In 0.53Ga 0.47As long wavelength infrared (LWIR) quantum well infrared photodetector (QWIP) focal plane array (FPA). The FPA, which is hybridized to a read-out integrated circuit having a charge capacity of 1.1 × 10 7 electrons, yielded a mean noise equivalent temperature difference (NETD) of ∼40 mK at a cold finger temperature as high as 77 K. The performance of the FPA, being comparable to that of AlGaAs/GaAs QWIP FPAs, clearly demonstrates the feasibility of the InP/InGaAs material system as an Al-free alternative to AlGaAs/GaAs system for large format LWIR QWIP FPAs.
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