Abstract
The common approximations found in literature for the balance equation method used for non-stationary submicron device simulation are presented and discussed. To assess different approximations, the full balance equation model is solved numerically solved for the n+-i-n+ submicron silicon structure where nonstationary transport effects eventually take place. The results obtained from the derived approximate models applied to the same silicon structure are compared with those obtained from the full model. In all cases, empirical formulae for momentum and energy relaxation times are used to clarify only the effect of approximations on the simulation results.
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