Assessing the impact of step gate oxide and gate electrode engineering on performance of β-Ga2O3 MOSFET for high frequency applications

Abstract

In the present work, the advantages of step gate oxide and gate electrode engineering designs have been amalgamated with scaled β – Ga2O3 MOSFET for ultra-high frequency applications. Various device attributes such as channel potential, electric field distribution, output and transfer characteristics etc., have been studied using both analytical modeling and simulation approaches. Furthermore, the paper also explores numerous high frequency figure of merits such as cut-off frequency, gain bandwidth product and transconductance frequency product etc. Two-port parameters i.e., scattering parameters, Rollett's stability factor etc., and high-power metrics such as output power and power-added-efficiency etc., have also been investigated. The variation of device gain with frequency has also been studied. Furthermore, a thorough comparison is drawn between the proposed device, the device with only step gate oxide engineering and a uniform gate throughout, and the conventional device without any of these designs for fair assessment. It has been demonstrated that the proposed design is reliable and efficient with significant improvement in abovementioned figure of merits which makes it suitable contender for ultra-high frequency applications.