Abstract
TiSi 2 layers are deposited in a short time cycle using a rapid thermal processing system at reduced pressure and temperature, called LRP for limited reaction processing. The use of TiCl 4 from a liquid or from a solid source gives selective layers with minimal or no substrate consumption. However, two main problems are studied in this paper which have a strong effect on a technological process: substrate doping behavior under silicide growth and post-annealing reactions and silicide grain size. We present some recent results on the latter as well as recall our interpretation of the TiSi 2 formation from a kinetic point of view. Some technological results on 4 inch wafers will also be presented.
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