ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model

Sourabh Khandelwal,Dhawal Mahajan,Sudip Ghosh,Tor A Fjeldly,Yogesh Singh Chauhan,Raghvendra Dangi,Sheikh Aamir Ahsan,Ahtisham Pampori

doi:10.1109/ted.2018.2867874

ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model

Sourabh Khandelwal, Dhawal Mahajan + Show 6 more

https://doi.org/10.1109/ted.2018.2867874

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Journal: IEEE Transactions on Electron Devices	Publication Date: Jan 1, 2019
Citations: 123

Affiliation: Macquarie University, Indian Institute of Technology Kanpur, Norwegian University of Science and Technology

#GaN Power Devices #GaN Power + Show 8 more

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Abstract

We present the latest developments in Advance SPICE Model for GaN (ASM GaN) HEMTs in this paper. The ASM GaN model has been recently selected as an industry-standard compact model for GaN radio frequency (RF) and power devices. The core surface-potential calculation and the modeling of real device effects in this model are presented. We discuss the details of the nonlinear access region model and enhancement in this model to include a physical dependence on barrier thickness. We also present the novel model feature of configurable field-plate modeling and discuss the extraction procedure for the same. New results with the ASM GaN model on high-frequency and enhancement-mode GaN power devices are also presented.

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