Abstract

Recently, the interest in grid-tied PV transformer-less inverters has increased rapidly, because of their higher efficiency and lower cost compared to traditional line transformer inverters. This paper presents a new modified transformer-less topology derived from H5 inverter, and provides a detailed comparison between the use of GaN and Si devices for the proposed topology. Detailed operation modes, inverter structure and switching strategy of the proposed topology are presented. Datasheet information, conduction losses, switching losses, and heat sink requirements are studied and analyzed to provide an accurate comparison between GaN and Si power devices for the proposed topology operating at unity power factor. The results show that, GaN power devices significantly reduce the power losses in the system, which consequently allow a significant increase in either inverter power rating or switching frequency. Thus, the use of GaN power devices for the proposed inverter can be more appealing and cost-effective approach.

Highlights

  • The rising cost of energy and the environmental issues of fossil resources led to the recent interest in renewable energy

  • In order to verify the benefits of replacing Si MOSFET with Gallium Nitride (GaN) HEMT in the inverter; the proposed topology in Figure 2 was simulated and analyzed using co-simulation between PSIM

  • MOSFET module structure whereas for the GaN model the temperatures are higher at the right end near the MOSFETs with higher losses while the left end with lower losses has lower temperatures

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Summary

Introduction

The rising cost of energy and the environmental issues of fossil resources led to the recent interest in renewable energy. One of the solutions proposed to minimize the leakage current is to maintain a constant CM voltage for all switching states [10] Such solution requires a higher number of components that increase the system complexity. Another solution to minimize the leakage current is to isolate the two sources of the system (PV, grid) during the zero-state, by modifying the PWM to keep the CM voltage constant [11,12,13,14].

Proposed Topology
Operation Modes Analysis
Theoretical Power Loss Model Calculation
Performance Evaluation of Si MOSFET and GaN HEMT
Conduction Characteristics
Switching Characteristics
Simulation Results and Discussion
Efficiency Improvement
Passive Component Reduction
Improvement In Power Rating
Model Outline
Model Geometry
Material Properties
Heat Transfer Physics Modeling
Model Simulation and Results
Conclusions

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