Abstract
We have achieved epitaxial growth of Dy1Ba2Cu3Ox by Molecular Beam Epitaxy deposition. Atomic Oxygen is introduced with a DC plasma cell. Using an Atomic Layer Epitaxy technique we have observed good electron diffraction patterns during growth.The 1:2:3 phase has been detected by X-Rays diffraction. However the Oxygen content of the films is still too small, leading to a semiconducting behavior for the as-deposited films.
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