Abstract
Electronic synaptic devices with photoelectric sensing function are becoming increasingly important in the development of neuromorphic computing system. Here, we present a photoelectrical synaptic system based on high-quality epitaxial Ba0.6Sr0.4TiO3 (BST) films in which the resistance ramp characteristic of the device provides the possibility to simulate synaptic behavior. The memristor with the Pt/BST/Nb:SrTiO3 structure exhibits reliable I–V characteristics and adjustable resistance modulation characteristics. The device can faithfully demonstrate synaptic functions, such as potentiation and depression, spike time-dependent plasticity, and paired pulse facilitation, and the recognition accuracy of handwritten digits was as high as 92.2%. Interestingly, the functions of visual perception, visual memory, and color recognition of the human eyes have also been realized based on the device. This work will provide a strong candidate for the neuromorphic computing hardware system of photoelectric synaptic devices.
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