Abstract
P-type arsenic doped epitaxial layers of HgCdTe have been grown by metalorganic chemical vapor deposition using two alkyl sources, tertiarybutylarsine and diethylarsine. Data are presented on Hall characteristics and arsenic concentration profiles. High activation efficiencies and hole mobilities have been obtained over the range mid-1015 to low-1017 cm−3.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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