Abstract
The advantages of the use of As-doped polycrystalline silicon film over that of As-doped glass film in the fabrication of high speed bipolar integrated circuits have been shown. The films have been used for doping buried layer and emitter. Deposition conditions optimized for the As-doped polycrystalline silicon film allows low junction leakage to be attained with low pipe density. During the course of the work the mechanism for the formation of pipes have been suggested.
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