Abstract
The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm−3 range upon slow cooling. We present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm−3, yet we also demonstrate CdTe with >1017 cm−3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.
Submitted Version
Published Version
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