Abstract
The surface cleaning of InGaAs and InAlAs is studied using synchrotron radiation photoelectron spectroscopy. Thermal annealing at 400°C cannot completely remove the native oxides from those surfaces. Elemental arsenic buildup is observed on both surfaces after acid treatment using HCl, HF, or H2SO4 solution, which is similar to acid-cleaned GaAs surface. Cleaned InGaAs surface is oxide-free but small amount of aluminum oxide remains on cleaned InAlAs surface. The common chemical reactions between III-As semiconductors and acid solutions are identified and are found to be dominated by arsenic chemistry.
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