Arsenic antisite and oxygen incorporation trends in GaAs grown by water-mediated close-spaced vapor transport

Abstract

Close-spaced vapor transport (CSVT) provides a plausible path to lower the costs of GaAs deposition as it uses only solid precursors and provides precursor utilization in principle approaching 100%. However, the use of H2O as a transport agent causes O to be incorporated in CSVT films, and O has been associated with a number of electrically active defect centers in GaAs, which decrease minority carrier lifetimes. Using deep-level transient spectroscopy, we study the effect of H2O concentration and substrate temperature on electron trap concentrations in n-type GaAs. We find that the most-prominent O-related center (ELO) typically has a much higher concentration than the center usually associated with As antisites (EL2), but that overall defect concentrations can be as low as those in films deposited by common vapor phase techniques. The trends with increasing H2O concentration suggest that ELO is most likely a defect complex with two As antisites. We also consider the optimal conditions for achieving high growth rates and low defect concentrations using CSVT. The results of this study have implications for the future CSVT growth using halide transport agents, where the ELO defect would be eliminated but EL2 might have a higher concentration.