Abstract
A novel field emission cathode process has been developed to produce cathode arrays with individual emitter structures having gates with <300 nm diameters. Ion tracking lithography was utilized to pattern submicron features, which can be controlled over the range 30–300 nm, and to create self-aligned and nanosized, gated emitter structures. Nanocone emitter tips were deposited into the gate structure using a variation of the Spindt process. Field emitter arrays having ∼300 nm gate diameters and an emitter density of 108/cm2 exhibited a current density of 4 mA/cm2 for a 45 V gate bias. This ion tracking lithographic approach is suitable and scalable for large flat panel video displays and appears to be commercially viable.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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