ArF-excimer-laser-induced emission and absorption bands in fused silica synthesized under oxidizing conditions.

Abstract

ArF-excimer-laser-induced absorption and emission bands in type-III fused silica synthesized under oxidizing conditions were investigated. The fused silica irradiated with the ArF excimer laser shows an absorption band at 4.8 eV and an emission band at 1.9 eV, which are considered to be created by oxygen molecules dissolved in the glass. In addition to these bands, an absorption band at 2.0 eV ascribed to the nonbridging-oxygen hole center is observed. Solarization is enhanced strongly by annealing in He ambient. Based on these results, we proposed a model to describe the phenomena: ${\mathrm{H}}_{2}$O molecules bound to the \ensuremath{\equiv}Si-OH structure by hydrogen bonds creates oxygen molecules which are considered to be precursors of the 4.8- and the 1.9-eV bands.