Abstract
Area-selective atomic layer deposition (ALD) is a technique that can be used for fabricating 3D structures with dimensions down to the nanoscale. A patterned resist, typically a self-assembled monolayer (SAM), directs film deposition through area-selective ALD, leading to lateral patterning. This article will describe the overall approach to area-selective ALD, introduce the process of atomic layer deposition, and discuss the development of monolayer ALD resists. We will describe the results of studies which show that monolayers with a high degree of packing and hydrophobicity perform best in blocking ALD, and that resistance against ALD can be used as a sensitive probe of SAM quality. We further describe patterning of the SAM through soft lithography, in particular microcontact printing (μCP), for the area-selective ALD process, and compare the area-selective ALD processes for HfO2 and Pt ALD. The powerful patterning capability of μCP and the flexibility of area-selective ALD for various materials can im...
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