Abstract
A polymer-based masking approach to perform area selective atomic layer deposition (ASALD) of titanium dioxide (TiO2) has been demonstrated. Direct patterned growth of TiO2 has been performed using TiCl4 or Ti(OCH(CH3)2)4 as metal precursors and DI water as the oxygen source. PMMA is used as a photodefinable masking layer. Intrinsic reactivity of the metal precursor and its diffusion through the masking layer are critical in establishing a successful ASALD process. In addition, a novel approach to top surface imaging based on ASALD has also been demonstrated. Direct area selective patterned growth of TiO2 on a chemically amplified protected polymer film and subsequent pattern transfer by oxygen plasma etching has been achieved
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