Abstract
A high radiation environment is responsible for many unpropitious effects in todays technology, out of which aerospace space applications is a part. This increased the demand of designing radiation hardened circuits for faultless circuit operation. A radiation hardened gain memory cell is proposed in this paper, which can be used for reliable memory storing operation. This memory cell is limited to solution for only single event upset. Further for the read operation the suitable sense amplifier is designed. 45nm CMOS-technology is considered for the implementation and analysis of this memory cell in Cadence Virtuoso tool. The area and power consumption has been optimized to a great extent compared to existing radiation hardened by design (RHBD) memory cells.
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