Abstract
Abstract Herein, we report the field electron emission investigations on template free solvothermally synthesized layered MoS 2 nanosheets as well as novel phase of CdMoS 4 nanoflowers at the base pressure of ∼1 × 10 −8 mbar. The turn-on field, threshold field and maximum emission current densities for both MoS 2 and CdMoS 4 are strongly influenced by thermal annealing in inert atmosphere. The turn on field, required to draw emission current density of 1 μA/cm 2 is found to be 5.8 and 3.2 V/μm for pristine and annealed MoS 2 at 400 °C. In case of as prepared and annealed CdMoS 4 sample the turn on field values are found to be ∼6.2 and 5.0 V/μm, respectively. The emission current versus time ( I – t ) plot measured at the preset current values of ∼1 μA for pristine and annealed sample indicates stable operation of the emitter. The emission current fluctuations for annealed sample are observed to be less as compared with the pristine sample due to conditioning of the emitter, thereby showing highly stable nature of emitter. Thus, the present result demonstrates the potential of annealed MoS 2 nanosheets and CdMoS 4 nanoflowers as an emerging materials for micro/nanoelectronics and flat panel field emission display applications.
Published Version
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