Abstract
VO2 layers with a low metal–insulator phase transition (MIT) temperature TMIT below 40 °C were prepared using magnetron sputtering, rapid thermal annealing, and Ar2+ ion implantation. The implantation-induced strains and point defects effectively lower the metal–insulator transition temperature, while the subsequent thermal cycling (cooling-heating cycles) improves the temperature coefficient of resistance (TCR) up to the values >10%/°C within the temperature range 30–40 °C. These approaches can be used to extend the range of applications of VO2 thin films, especially for uncooled microbolometers. A methodology for studying the influence of defects and strains on electrical parameters of MIT in VO2 films has been proposed.
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