Approaches to single wafer high current ion implantation

Abstract

Single wafer processing is gaining increasing market acceptance for high current ion implantation, particularly for 65nm technologies. We review the reasons for this and discuss the two competing approaches to single wafer high current implant design. These are a broad beam, single axis mechanical scan approach and a spot beam, dual axis mechanical scan approach. We compare and contrast the design complexities of each as well as their advantages and limitations.