Abstract
The paper presents a compact D-band monolithic sub-harmonic mixer (SHM) with 3 μm planar hyperabrupt schottky-varactor diodes offered by 70 nm GaAs mHEMT technology. According to empirical equivalent-circuit models, a wide-band large signal equivalent circuit model of the diode is proposed. Based on the extracted model, the mixer is implemented and optimized with a shunt-mounted anti-parallel diode pair (APDP) to fulfill the sub-harmonic mixing mechanism. Furthermore, a modified asymmetric three-transmission-line coupler is devised to achieve high-level coupling and minimize the chip size. The measured results show that the conversion gain varies between −13.9 dB and −17.5 dB from 110 GHz to 145 GHz, with a local oscillator (LO) power level of 14 dBm and an intermediate frequency (IF) of 1 GHz. The total chip size including probe GSG pads is 0.57 × 0.68mm2. In conclusion, the mixer exhibits outstanding figure-of-merits.
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